发明名称 CLEANING COMPOSITION FOR REMOVING RESIDUES FROM PLASMA ETCH
摘要 <p>A cleaning composition for removing the residues from plasma etch includes aqueous citric acid/citrate buffer solution, fluoride, macromolecule anti-corrosion, antifreezer and solvent. The cleaning composition may clean the residues from plasma etch, and has low etch rate for a nonmetal and metal substrate, such as Si, SiO2, tetraethylorthosilicate (PETEOS), low dielectric material, Ti, Al and Cu.</p>
申请公布号 WO2008128419(A1) 申请公布日期 2008.10.30
申请号 WO2008CN00682 申请日期 2008.04.03
申请人 ANJI MICROELECTRONICS (SHANGHAI) CO., LTD;LIU, BING;PENG, LIBBERT, HONGXIU 发明人 LIU, BING;PENG, LIBBERT, HONGXIU
分类号 C11D1/83;G03F7/42;C23G1/06;H01L21/02 主分类号 C11D1/83
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