发明名称 |
CLEANING COMPOSITION FOR REMOVING RESIDUES FROM PLASMA ETCH |
摘要 |
<p>A cleaning composition for removing the residues from plasma etch includes aqueous citric acid/citrate buffer solution, fluoride, macromolecule anti-corrosion, antifreezer and solvent. The cleaning composition may clean the residues from plasma etch, and has low etch rate for a nonmetal and metal substrate, such as Si, SiO2, tetraethylorthosilicate (PETEOS), low dielectric material, Ti, Al and Cu.</p> |
申请公布号 |
WO2008128419(A1) |
申请公布日期 |
2008.10.30 |
申请号 |
WO2008CN00682 |
申请日期 |
2008.04.03 |
申请人 |
ANJI MICROELECTRONICS (SHANGHAI) CO., LTD;LIU, BING;PENG, LIBBERT, HONGXIU |
发明人 |
LIU, BING;PENG, LIBBERT, HONGXIU |
分类号 |
C11D1/83;G03F7/42;C23G1/06;H01L21/02 |
主分类号 |
C11D1/83 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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