| 摘要 |
<p>Techniques for improved timing control of memory devices are disclosed. In one embodiment, the techniques may be realized as a memory controller to communicate with a memory device via a communications link. The memory controller may comprise a memory interface to exchange data with the memory device via a set of N conductors according to at least one clock, the data being encoded such that each M bits of data are represented by at least one symbol and each symbol is associated with a combination of signal levels on a group of n conductors, wherein M < N and n is equal to at least one and at most N. The memory may also comprise clock control logic to receive timing calibration information from the memory device and to output a signal to adjust a phase of the at least one clock based on the timing calibration information.</p> |
