| 摘要 |
A sense amplifier of semiconductor memory device is provided to secure a transition time of a global I/O line without interference and without changing the pulse width of an enable signal of a sense amp. In a sense amplifier of semiconductor memory device, a precharge unit(400) precharges a first data I/O line with a predetermined voltage according to a precharge control signal. An amplifier(402) amplifies a voltage of the first data I/O line in response to sense enable signal. A delay unit(404) delays the sense amp enable signal for predetermined time and outputs the sense amp enable signal. A latch latches the output data of the amplifier corresponding to the delay signal. An inverter the output from the latch and input/output driver drives a second data I/O line with pull-up/pull-down corresponding to the output of the inverter.
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