DRAM DEVICE HAVING BURRIED CONATCT PLUG AND THE METHOD OF FORMING THE SAME

摘要

A DRAM device and a method for forming the same are provided to secure the etching process margin while forming a buried contact hall by preventing the electric connection between a buried contact plug and a bit line. A DRAM device comprises a first and second active regions(120a,120b) on a semiconductor substrate; a pair of gate patterns(122a,122b) passing over the first and second active regions; a first interlayer dielectric layer covering the whole surface of semiconductor substrate; a pair of bit line formed on the first interlayer dielectric layer and crossing the pair of gate patterns; a second interlayer dielectric layer covering the both substrates of bit lines; a first and second buried contact hall plugs(152a,152b) arranged in a buried contact hall which passes through the first and second interlayer dielectric layers.