发明名称 THIN-FILM TRANSISTOR ARRAY SUBSTRATE, MANUFACTURING METHOD THEREOF, AND DISPLAY UNIT
摘要 PROBLEM TO BE SOLVED: To provide a highly reliable thin-film transistor array substrate having stable performance, a manufacturing method thereof, and a display unit. SOLUTION: The thin-film transistor array substrate according to this invention comprises a semiconductor layer 3a formed on a substrate 1 and having source/drain regions 31a and a channel region 32a wherein the dimension of the source/drain regions 31a in the channel width direction is smaller than the channel width of the channel region 32a, a gate insulating film 4a formed on the semiconductor layer 3a, a gate electrode 5 arranged oppositely to the channel region 32a via an gate insulating film 4a, an interlayer insulating film 6 covering the gate electrode 5 and the gate insulating film 4a, and metal electrodes 8 connected with the source/drain regions 31a via the contact holes 7a and 7b penetrating the interlayer insulating film 6 and the gate insulating film 4a. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2008263128(A) 申请公布日期 2008.10.30
申请号 JP20070106012 申请日期 2007.04.13
申请人 MITSUBISHI ELECTRIC CORP 发明人 YAMAYOSHI ICHIJI
分类号 H01L29/786;G02F1/1368 主分类号 H01L29/786
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