| 发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME, AND DEVICE APPLICATION SYSTEM |
| 摘要 |
PROBLEM TO BE SOLVED: To provide a high-performance semiconductor device manufactured by using a semiconductor surface treatment that can achieve a surface protection and a surface passivation using a baron nitride film, a deposition process, its surface protection technology, and surface passivation technology and an electronic device for communication system containing the semiconductor device. SOLUTION: The semiconductor device has a film containing at least boron and nitrogen atoms. COPYRIGHT: (C)2009,JPO&INPIT
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| 申请公布号 |
JP2008263212(A) |
申请公布日期 |
2008.10.30 |
| 申请号 |
JP20080131238 |
申请日期 |
2008.05.19 |
| 申请人 |
WATANABE SHOKO:KK;SUGINO TAKASHI |
发明人 |
SUGINO TAKASHI;KUSUHARA MASAKI;UMEDA MASARU |
| 分类号 |
H01L21/318;H01L21/331;H01L21/335;H01L21/337;H01L21/338;H01L29/20;H01L29/737;H01L29/778;H01L29/812 |
主分类号 |
H01L21/318 |
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