| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of improving breakdown voltage in the entire device. SOLUTION: The semiconductor device 1 comprises a semiconductor chip 2 with a silicon-on-insulator (SOI) substrate 31 as a base, for example. On a top layer part of the SOI substrate 31, a pMOS and an nMOS are formed, for example. In the semiconductor device 1, a potential (substrate potential) on a rear side of the SOI substrate 31 is controlled at an intermediate potential between a ground potential and a high-voltage power supply potential. Thus, the pMOS can be made highly voltage-resistant in comparison with a case where the substrate potential is set to the ground potential. Furthermore, the nMOS can be made highly voltage-resistant in comparison with a case where the substrate potential is set to the power supply potential. As a result, voltage resistance in the entire device can be improved in comparison with conventional semiconductor devices. COPYRIGHT: (C)2009,JPO&INPIT
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