| 摘要 |
PROBLEM TO BE SOLVED: To suppress an S/N by reducing a dark current that is generated on a silicon surface from flowing into a charge accumulation layer of a photoelectric conversion section. SOLUTION: A photodiode 15 includes an N-type charge accumulation layer 53 formed on a P-type well 52, a P type depletion preventive layer 54 disposed on the charge accumulation layer 53, and an N-type top layer 55 disposed on the depletion preventive layer 54. The photodiode 15 comprises a charge discharging transistor 40 for discharging charges in the top layer 55. The charge discharging transistor 40 is an MOS transistor with the top layer 55 as a source and with a power supply diffusion section 33 to which a power supply voltage is applied as a drain. A gate 41 of the charge discharging transistor 40 is configured so as to be integrally consecutive with a gate of a source follower transistor constituting an amplification transistor. COPYRIGHT: (C)2009,JPO&INPIT
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