发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device that reduces the volume of particulates such as organic substances to be adsorbed onto a thin film formed on a substrate, improves the uniformity of the film thickness formed thereon, and reduces haze particles. SOLUTION: The method includes steps of fitting a substrate 200 to a support tool, carrying the support tool 217 to which the substrate is fitted into a treating chamber 201, annealing the substrate fitted to the support tool in an annealing chamber, carrying out the support tool to which the annealed substrate is fitted from the annealing chamber, and collecting the annealed substrate from the support tool carried out from the annealing chamber. Further, the process for collecting the annealed substrate is carried out before the substrate temperature becomes lower than that of the volatilization of the organic substance adsorbed on the substrate surface. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2008263064(A) 申请公布日期 2008.10.30
申请号 JP20070104726 申请日期 2007.04.12
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 HARADA TORU;HATTA HIROKI
分类号 H01L21/02;H01L21/31 主分类号 H01L21/02
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