| 摘要 |
PROBLEM TO BE SOLVED: To provide a high-quality semiconductor device. SOLUTION: This semiconductor device 100 is provided with: a first N-channel-type MOS transistor 30 and a second N-channel-type MOS transistor 31 which are formed on a P-type well 9; a first P-type diffusion resistor 41 formed on a first N-type well 8b; and a control circuit 800 connected to a gate of the second N-channel-type MOS transistor 31 and controlling the drive operation of the second N-channel-type MOS transistor 31. A drain of the first N-channel-type MOS transistor 30 is connected to a first external terminal 401, and its source is electrically connected to a source of the second N-channel-type MOS transistor 31 and the P-type well 9. One end 51 of the first P-type diffusion resistor 41 is connected to a drain of the second N-channel-type MOS transistor 31, and its other end is electrically connected to a second external terminal 402 and the first N-type well 8b. COPYRIGHT: (C)2009,JPO&INPIT
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