| 发明名称 |
GaN-BASED PERMEABLE BASE TRANSISTOR AND METHOD OF FABRICATION |
| 摘要 |
An etched grooved GaN-based permeable-base transistor structure is disclosed, along with a method for fabrication of same.
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| 申请公布号 |
US2008265259(A1) |
申请公布日期 |
2008.10.30 |
| 申请号 |
US20080132802 |
申请日期 |
2008.06.04 |
| 申请人 |
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION, INC. |
发明人 |
GUNTER LIBERTY L.;CHU KANIN;EDDY CHARLES R.;MOUSTAKAS THEODORE D.;BELLOTTI ENRICO |
| 分类号 |
H01L29/20;H01L27/06;H01L29/772 |
主分类号 |
H01L29/20 |
| 代理机构 |
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