发明名称 PROCESS CHAMBER FOR DIELECTRIC GAPFILL
摘要 A system (100) to form a dielectric layer on a substrate from a plasma of dielectric precursors is described. The system (100) may include a deposition chamber (201 ), a substrate stage in the deposition chamber (201 ) to hold the substrate, and a remote plasma generating system coupled to the deposition chamber (201 ), where the plasma generating system is used to generate a dielectric precursor having one or more reactive radicals. The system (100) may also include a precursor distribution system (700) comprising dual-channel showerhead (700) positioned above the substrate stage. The showerhead (700) may have a faceplate (802) with a first set of openings (804) through which the reactive radical precursor enters the deposition chamber (201 ), and a second set of openings (806) through which a second dielectric precursor enters the deposition chamber (201 ). An in-situ plasma generating system may als be included to generate the plasma in the deposition chamber (201 ) from the dielectric precursors supplied to the deposition chambe (201)
申请公布号 WO2007140421(A3) 申请公布日期 2008.10.30
申请号 WO2007US69996 申请日期 2007.05.30
申请人 APPLIED MATERIALS, INC.;LUBOMIRSKY, DMITRY;LIANG, QIWEI;PARK, SOONAM;CHUC, KIEN, N;YIEH, ELLIE 发明人 LUBOMIRSKY, DMITRY;LIANG, QIWEI;PARK, SOONAM;CHUC, KIEN, N;YIEH, ELLIE
分类号 C23F1/00;C23C16/22;C23C16/30;C23C16/36;C23C16/40;C23C16/46;C23C16/48;C23C16/52;H01L21/306 主分类号 C23F1/00
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