METHOD OF MANUFACTURING INTEGRATED DEEP AND SHALLOW TRENCH ISOLATION STRUCTURES

摘要

A method of forming an integrated deep and shallow trench isolation structure comprises depositing a hard mask on a film stack (10) having a plurality of layers formed on a substrate (11) such that the hard mask (16) is deposited on a furthermost layer from the substrate, imprinting a first pattern into the hard mask to define an open end of a first trench, imprinting a second pattern into the hard mask to define an open end of a second trench, and etching into the film stack the first trench to a first depth and the second trench to a second depth such that the first trench and the second trench each define a blind aperture in the surface of the film stack.