发明名称 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD
摘要 <P>PROBLEM TO BE SOLVED: To suppress deformation and distortion of a gas supply member and stably process a substrate by keeping a shower plate at optional temperature and improving uniformity of in-plane temperature. <P>SOLUTION: The plasma processing apparatus 1 is used to house a substrate W in a processing container 2 and process the substrate W by plasma which is changed from a processing gas. A gas supply member 50 for supplying a processing gas is arranged in the processing container 2, and a heat medium passage 55 is formed inside the gas supply member 50 to distribute a heat medium, and then passage change-over mechanisms 70 and 71 are provided to change over the distribution direction of the heat medium in the heat medium passage 55. The distribution direction of the heat medium is alternately changed over, thus preventing the deflection of temperature at the inlet and outlet sides of the heat medium in the gas supply member 50. <P>COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2008262968(A) 申请公布日期 2008.10.30
申请号 JP20070102663 申请日期 2007.04.10
申请人 TOKYO ELECTRON LTD 发明人 NOZAWA TOSHIHISA;KOTANI KOJI
分类号 H01L21/205;C23C16/452;H01L21/3065;H05H1/46 主分类号 H01L21/205
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