| 摘要 |
A method of manufacturing a metal oxide semiconductor transistor having a metal gate is provided. The method firstly includes a step of providing a substrate. A dummy gate is formed on the substrate, a spacer is formed around the dummy gate, and doped regions are formed in the substrate outside of the dummy gate. A bevel edge is formed on the spacer, and a trench is formed in the inner sidewall of the spacer. A barrier layer, and a metal gate are formed in the trench and on the bevel edge, and the barrier layer will not form poor step coverage.
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