发明名称 |
MOS devices with improved source/drain regions with SiGe |
摘要 |
A semiconductor structure and methods for forming the same are provided. The semiconductor structure includes a semiconductor substrate; a gate stack on the semiconductor substrate; a SiGe region in the semiconductor substrate and adjacent the gate stack, wherein the SiGe region has a first atomic percentage of germanium to germanium and silicon; and a silicide region over the SiGe region. The silicide region has a second atomic percentage of germanium to germanium and silicon. The second atomic percentage is substantially lower than the first atomic percentage.
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申请公布号 |
US2008265256(A1) |
申请公布日期 |
2008.10.30 |
申请号 |
US20070796369 |
申请日期 |
2007.04.27 |
申请人 |
LIN CHUN-CHIEH;HSU WEI-HUA;CHANG YU-EN PERCY;CHANG CHUNG LI;CHENG CHI-FENG;HUNG WIN;KO KISHIMOTO |
发明人 |
LIN CHUN-CHIEH;HSU WEI-HUA;CHANG YU-EN PERCY;CHANG CHUNG LI;CHENG CHI-FENG;HUNG WIN;KO KISHIMOTO |
分类号 |
H01L29/94 |
主分类号 |
H01L29/94 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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