METHOD OF FORMING ISOLATION LAYER IN SEMICONDUCTOR DEVICE

摘要

The present invention discloses to a method of forming an isolation layer in a semiconductor device. In particular, the method of forming an isolation layer in a semiconductor device of the present invention comprises the steps of providing a semiconductor substrate on which a trench is formed; forming spacers on side walls of the trench; forming a first insulating layer to fill a portion of the trench such that a deposition rate on the semiconductor substrate which is a bottom surface of the trench and exposed between the spacers is higher than that on a surface of the space; and forming a second insulating layer on the first insulating layer so as to fill the trench with the second insulating layer. An O₃-TEOS layer on the exposed semiconductor substrate which is a bottom surface of the trench is grown faster than that on a surface of the spacer formed of an oxide layer or a nitride layer to prevent the O₃-TEOS layers grown on the side walls from coming into contact with each other, and so it is possible to inhibit a generation of a seam and to enhance a gap-filling characteristic for the trench.