| 摘要 |
<p>A FLOTOX-type EEPROM has a prescribed interval (Y) between an N region (25), which is formed below a tunnel window (12) as an impurity region, and a channel stopper region (19) formed below a LOCOS oxide film (18). Therefore, even when an excessive voltage is applied to the tunnel window (12), the tunnel window (12) is not damaged. As a result, a voltage applied to the tunnel window (12) can be limited, stress applied to the tunnel window (12) is reduced and the FLOTOX-type EEPROM having an improved number of rewriting is provided.</p> |
