SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

摘要

A semiconductor device and a method for fabricating the same are provided to improve the carrier mobility of NMOS transistor AND PMOS transistor without adding an additional process for the first and second regions. A method for fabricating a semiconductor device includes the step of providing a semiconductor substrate(100) having a first and second regions; the step of forming a first gate electrode(121a) on the first region, a second gate electrode(122a) on the second region; the step of forming a first source/drain region in the semiconductor substrate by injecting a first conductive foreign materials with a first tilt angle to the first region; the step of forming a second source/drain region in the semiconductor substrate by injecting a second conductive foreign materials with a second tilt angle greater than the first tilt angle to the second region; the step of forming a capping layer on a front side of semiconductor substrate; and the step of annealing the outcome.