发明名称 Electron Element Using Silicone Slurry and Manufacturing Method of the Same
摘要 An electronic device using silicon slurry and a method for manufacturing the same are provided to commercially use silicon slurry to be discarded by uniformly reducing the particle size of the silicon slurry to obtain silicon powder and by forming an active layer of a solar cell using the silicon power. An electronic device using silicon slurry includes an active layer or a doping layer formed at an upper portion of a substrate. The active layer or the doping layer is made of a silicon wafer or amorphous silicon. The active layer is obtained by forming the silicon slurry, produced during a manufacturing process of the silicon wafer, in the form of a thin film and sintering the silicon slurry. The doping layer is obtained by forming intrinsic slurry in the form of a thin film and implanting a p-type dopant and an n-type dopant in the intrinsic slurry. The doping layer is obtained by forming a p-type doped silicon slurry or an n-type doped silicon slurry in the form of a thin film and sintering the p-type doped silicon slurry or the n-type doped silicon slurry.
申请公布号 KR100865960(B1) 申请公布日期 2008.10.30
申请号 KR20070033023 申请日期 2007.04.03
申请人 发明人
分类号 H01L29/786;H01L29/861;H01L31/04 主分类号 H01L29/786
代理机构 代理人
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