| 摘要 |
<p>Semiconductor wafer and process for its production The present invention relates to a semiconductor wafer comprising the following layers in the given order: - a monocrystalline substrate wafer (1) consisting essentially of silicon, - a first amorphous intermediate layer (2) comprising an electrically insulating material and having a thickness of 2 nm to 100 nm, - a monocrystalline first oxide layer (3) having a cubic Ia-3 crystal structure, a composition of (Me12O3)1-x(Me22O3)x wherein each of Me1 and Me2 is a metal and wherein 0 <- x <- 1, and a lattice constant which differs from the lattice constant of the material of the substrate wafer by 0 % to 5 %. The invention also relates to a process for manufacturing this semiconductor wafer by epitaxial deposition.</p> |
