| 摘要 |
PROBLEM TO BE SOLVED: To provide a light-emitting element including a laser resonance surface having a high optical reflectivity, which attains a high perpendicularity with respect to a growth surface, causing no defect due to damage by reactive ions. SOLUTION: The light-emitting element includes: a plurality of conductive layer portions 12 composed of a diboride single crystal represented by chemical formula XB<SB>2</SB>(where X is one or more kinds of elements selected from Zr, Ti and Hf), which are formed on one major surface of a gallium nitride compound semiconductor layer 11 of a first conductivity type of Ga polarization; an InGaN single crystal layer 13a of Ga polarization represented by chemical formula In<SB>x</SB>Ga<SB>1-x</SB>N (where 0≤x<1), which is formed between the respective conductive layer portions 12 on the major surface; a light-emitting layer 14a composed of a gallium nitride compound semiconductor of Ga polarization formed on the InGaN single crystal layer 13a; and a gallium nitride compound semiconductor layer 15a of a second conductivity type of Ga polarization formed on the light-emitting layer 14a. COPYRIGHT: (C)2009,JPO&INPIT
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