| 摘要 |
A thin film transistor (TFT) including a nanowire semiconductor layer having nanowires aligned in one direction in a channel region is disclosed. The nanowire semiconductor layer is selectively formed in the channel region. A method for fabricating the TFT, a liquid crystal display (LCD) device using the TFT, and a method for manufacturing the LCD device are also disclosed. The TFT fabricating method includes forming alignment electrodes on the insulating film such that the alignment electrodes face each other, to define a channel region, forming an organic film, to expose the channel region, coating a nanowire-dispersed solution on an entire surface of a substrate including the organic film, forming a nanowire semiconductor layer in the channel region by generating an electric field between the alignment electrodes such that nanowires of the nanowire semiconductor layer are aligned in a direction, and removing the organic film.
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