| 摘要 |
A photodiode includes an anode (1202, 1302, 1402) and a cathode (1306, 1406) formed on a semiconductor substrate (402). A vertical electrode (702, 1314, 1414) is in operative electrical communication with a buried component (502, 1312, 1412) of the photodiode. In one implementation, the photodiode is an avalanche photodiode of a silicon photomultiplier. The substrate may also include integrated CMOS readout circuitry (1102). |
