| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device for reducing interface state density by fluorine implantation while inhibiting a defect from occurring due to the fluorine implantation and suppressed in characteristic fluctuation and leakage current, and its manufacturing method. SOLUTION: The semiconductor device includes a semiconductor substrate 1, well layers 3 and 5 formed on the substrate 1, a channel doped layer 6 formed on the well layers 3 and 5, a source-drain diffusion layer formed along an upper periphery in the channel doped layer 6, gate electrodes 12 formed on the channel doped layer 6 via a gate insulation film 7, and a polycrystalline silicon plug formed between the gate electrodes 12 to be coupled with the source-drain diffusion layer through the gate insulation film 7. The device is characterized in that fluorine is selectively implanted only into a source region 13 in the source-drain diffusion layer. COPYRIGHT: (C)2009,JPO&INPIT |
