TRANSPARENT OHMIC CONTACTS ON LIGHT EMITTING DIODES WITH CARRIER SUBSTRATES
摘要
A light emitting diode is disclosed that includes an active structure formed of at least p-type and n-type epitaxial layers of Group III nitride on a conductive carrier substrate. A conductive bonding system joins the active structure to the conductive carrier substrate. A first transparent ohmic contact is on the active structure adjacent the conductive carrier substrate, a second transparent ohmic contact is on the active structure opposite the conductive carrier substrate, and a third ohmic contact is on the conductive carrier substrate opposite from the active structure.
申请公布号
WO2008130823(A1)
申请公布日期
2008.10.30
申请号
WO2008US59390
申请日期
2008.04.04
申请人
CREE, INC.;EDMOND, JOHN, A.;SLATER, JR, DAVID, B.;BERGMANN, MICHAEL, J.
发明人
EDMOND, JOHN, A.;SLATER, JR, DAVID, B.;BERGMANN, MICHAEL, J.