| 摘要 |
When the adjacent resist portion of the resist layer having an arbitrary pattern is unitized by a reflow processing and the resist layer of the other pattern is formed, the desired pattern of shape can be taken shape. The resist layer of the first pattern is formed on the etched layer. Using the resist layer of the first pattern as mask, the first etching is performed on the etched layer. The resist solution is applied between the adjacent resist portion among the first pattern and the resist layer of the assistant pattern is formed. Thereafter, the resist portion of the assistant pattern and the resist portion of the first pattern are softened and flowed, and then the adjacent resist portion and the resist portion of the assistant pattern are integrated and the resist layer of the second pattern is formed. Using the resist layer of the second pattern as mask, the second etching is performed on the etched layer.
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