发明名称 HIGH-Q INDUCTOR STRUCTURE
摘要 An inductor structure is provided to generate high quality factor and inductance at a high frequency using an active inductor structure of gyrator structure and a spiral inductor. A high-Q Inductor structure includes a feedback device which is inserted between a source part of transistor(M2) and a gate part of transistor(M1) in order to comprise a series-resonant circuit equivalent with a parasitic capacitance generated from the gate source part of both transistors(M1,M2). An active inductor which has a gyrator structure is composed of the transistors.
申请公布号 KR20080096374(A) 申请公布日期 2008.10.30
申请号 KR20080027368 申请日期 2008.03.25
申请人 SEWON TELETECH INC. 发明人 KIM, CHUL DONG;KIM, HONG KI;JEONG, YONG CHAE
分类号 H01F27/00 主分类号 H01F27/00
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