发明名称 |
PLANARIZED PASSIVATION LAYER FOR SEMICONDUCTOR DEVICES |
摘要 |
<p>PLANARIZED PASSIVATION LAYER FOR SEMICONDUCTOR DEVICES A semiconductor device includes a substrate having a dielectric layer and a device layer on the substrate. The device layer has an opening. First and second sublayers are disposed on the device layer and line the opening. The second sublayer serves as a stop layer for planarization to provide a substantially planarized top surface for the semiconductor device.</p> |
申请公布号 |
SG146604(A1) |
申请公布日期 |
2008.10.30 |
申请号 |
SG20080026452 |
申请日期 |
2008.04.04 |
申请人 |
CHARTERED SEMICONDUCTOR MANUFACTURING LTD. |
发明人 |
LENG LIM SIN;KI KIM IN;SUNG PARK JONG;HWAN KIM MIN;WEI LU |
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