发明名称 PLANARIZED PASSIVATION LAYER FOR SEMICONDUCTOR DEVICES
摘要 <p>PLANARIZED PASSIVATION LAYER FOR SEMICONDUCTOR DEVICES A semiconductor device includes a substrate having a dielectric layer and a device layer on the substrate. The device layer has an opening. First and second sublayers are disposed on the device layer and line the opening. The second sublayer serves as a stop layer for planarization to provide a substantially planarized top surface for the semiconductor device.</p>
申请公布号 SG146604(A1) 申请公布日期 2008.10.30
申请号 SG20080026452 申请日期 2008.04.04
申请人 CHARTERED SEMICONDUCTOR MANUFACTURING LTD. 发明人 LENG LIM SIN;KI KIM IN;SUNG PARK JONG;HWAN KIM MIN;WEI LU
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