发明名称 |
HALOGEN-FREE AMORPHOUS CARBON MASK ETCH HAVING HIGH SELECTIVITY TO PHOTORESIST |
摘要 |
<p>HALOGEN-FREE AMORPHOUS CARBON MASK ETCH HAVING HIGH SELECTIVITY TO PHOTORESIST In one embodiment of the present invention, a halogen-free plasma etch processes is used to define a feature in a multi-layered masking stack including an amorphous carbon layer. In a particular embodiment, oxygen (O2), nitrogen (N2), and carbon monoxide (CO) are utilized to etch the amorphous carbon layer to form a mask capable of producing sub-100 nm features in a substrate film having a reduced line edge roughness value. In another embodiment, the present invention employs an O2 plasma pretreatment preceding the halogen-free amorphous carbon etch to first form an oxidized silicon region in a patterned photoresist layer to increase the selectivity of the amorphous carbon etch relative to a patterned photoresist layer containing unoxidized silicon.</p> |
申请公布号 |
SG146578(A1) |
申请公布日期 |
2008.10.30 |
申请号 |
SG20080022857 |
申请日期 |
2008.03.24 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
KIM, JONG MUN;WANG, JUDY;JOSHI, AJEY M.;LIU, JINGBAO;PU, BRYAN Y. |
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