LEAK CURRENT DETECTOR CIRCUIT, BODY BIAS CONTROL CIRCUIT, SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE TESTING METHOD

摘要

A leak current detector circuit (10) wherein the precision of detecting any leak currents in MOS transistors can be improved, while suppressing increase in circuit scale. The leak current detector circuit (10) comprises at least one P-channel MOS transistor (QP) that is connected to a high potential power supply and, when turned off, always generates a first leak current (Irp); at least one N-channel MOS transistor (QN) that is connected between a low potential power supply and the at least one P-channel MOS transistor and that, when turned off, always generates a second leak current (Irn); and a detector (20) that detects a potential (Vx) generated at a junction (X) between the at least one P-channel MOS transistor and the at least one N-channel MOS transistor in accordance with the first and second leak currents.