| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a vapor phase deposition method by which thermal environment in a reaction chamber is kept uniform, mixing of particles is prevented and stable film formation can be established, and to provide a rotation-revolution system vapor phase deposition apparatus that has such a structure capable of adopting this method. <P>SOLUTION: The vapor phase deposition method is used to rotate a susceptor, introduce a material gas from a gas inlet pipe while a substrate is being heated, grow a thin film on the surface of the substrate and repeat the film formation every time the substrate is changed anew. When the operation of film formation is completed, a partitioning plate and a susceptor cover are removed from a chamber, clean ones are arranged inside the chamber before the next operation is started. <P>COPYRIGHT: (C)2009,JPO&INPIT |
