| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a high purity Ga-sputtering target in which impurities such as oxygen are removed. <P>SOLUTION: The method for manufacturing the Ga sputtering target 111 is characterized by making Ga or a Ga-alloy into a liquid state, then pouring the liquid Ga or Ga-alloy into a backing plate 11 to obtain a baking plate 28 holding the liquid Ga or Ga-alloy, heat-treating the backing plate 28 holding the liquid Ga or Ga-alloy in a reduced pressure state or in a hydrogen gas atmosphere at a temperature not lower than the melting point of the Ga or Ga-alloy, and cooling the heat-treated Ga or Ga-alloy into a solid state. <P>COPYRIGHT: (C)2009,JPO&INPIT |
