发明名称 |
SEMICONDUCTOR STRUCTURE COMPRISING AN ELECTRICALLY CONDUCTIVE FEATURE AND METHOD OF FORMING THE SAME |
摘要 |
A method of forming a semiconductor structure comprises providing a semiconductor substrate comprising a layer of a dielectric material. A recess is provided in the layer of dielectric material. A first glue layer and a second glue layer are formed over the recess. The first glue layer comprises titanium and the second glue layer comprises tungsten nitride. The recess is filled with a material comprising tungsten.
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申请公布号 |
US2008265419(A1) |
申请公布日期 |
2008.10.30 |
申请号 |
US20070944039 |
申请日期 |
2007.11.21 |
申请人 |
FROHBERG KAI;FEUSTEL FRANK;PETERS CARSTEN |
发明人 |
FROHBERG KAI;FEUSTEL FRANK;PETERS CARSTEN |
分类号 |
H01L23/52;H01L21/4763 |
主分类号 |
H01L23/52 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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