Semiconductor component i.e. insulated gate bipolar transistor, has semiconductor region insulated against base region of n-channel transistor at lower side pointing to base region by another semiconductor region

摘要

The component has a n-channel transistor (10) and a p-channel transistor (20) with respective controllable channels, and arranged in an upper side close region (1a) of a semiconductor body (1). The p-channel transistor includes semiconductor regions (21, 22) of different conducting types. The semiconductor region (22) is insulated against a base region (2) of the n-channel transistor at a lower side (24) pointing to the base region by the semiconductor region (21). Injection of minority charge carrier is required in the base region in a switched on condition of the component. An independent claim is also included for a method for manufacturing a semiconductor component.