SEPARATE LAYER FORMATION IN A SEMICONDUCTOR DEVICE
摘要
<p>A semiconductor device (101) is formed in a semiconductor layer (107). A first gate dielectric layer (109) is formed over the semiconductor layer (107). A first conductive layer (111) is formed over the first gate dielectric (109). A first separation layer (113) is formed over the first conductive layer. A trench (205) is formed in the semiconductor layer (107) to separate the first mesa (201) and the second mesa (203). The trench (205) is filled with an isolation material (401) to a height above a top surface of the first conductive layer (111). The first conductive layer (111) is removed from the second mesa (203). A second conductive layer (703) is formed over the first separation layer (113) of the first mesa (203) and over the second mesa (203). A planarizing etch removes the second conductive layer (703) from over the first mesa (201). A first transistor (1201) of a first type is formed in the first mesa (201), and a second transistor (1203) of a second type is formed in the second mesa (203).</p>
