发明名称 |
RESISTANCE-VARIABLE STORAGE DEVICE |
摘要 |
<p>A resistance-variable storage device (10) includes: a resistance-variable element (1) which changes to a high-resistance state when a first voltage is applied and which changes to a low-resistance state when a second voltage is applied; a control device (4); a voltage limiting active element (2) which is connected in series to the resistance-variable element (1); and a current limiting active element (3) which is connected in series to the resistance-variable element (1) via the voltage limiting active element (2). The control device (4) is configured as follows. That is, upon change to the high-resistance state, the control device (4) controls the current limiting active element (3) so that a product of the current and the first resistance value is not smaller than the first voltage and controls the voltage limiting active element (2) so that an inter-electrode voltage is smaller than the second voltage; and upon change to the low-resistance state, the control device (4) controls the current limiting active element (3) so that an absolute value of a product of the current and the second resistance value is not smaller than the second voltage and an absolute value of a product of the current and the first resistance value is smaller than the first voltage.</p> |
申请公布号 |
WO2008129774(A1) |
申请公布日期 |
2008.10.30 |
申请号 |
WO2008JP00542 |
申请日期 |
2008.03.12 |
申请人 |
PANASONIC CORPORATION;KATOH, YOSHIKAZU;SHIMAKAWA, KAZUHIKO |
发明人 |
KATOH, YOSHIKAZU;SHIMAKAWA, KAZUHIKO |
分类号 |
G11C13/00 |
主分类号 |
G11C13/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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