发明名称 RESISTANCE-VARIABLE STORAGE DEVICE
摘要 <p>A resistance-variable storage device (10) includes: a resistance-variable element (1) which changes to a high-resistance state when a first voltage is applied and which changes to a low-resistance state when a second voltage is applied; a control device (4); a voltage limiting active element (2) which is connected in series to the resistance-variable element (1); and a current limiting active element (3) which is connected in series to the resistance-variable element (1) via the voltage limiting active element (2). The control device (4) is configured as follows. That is, upon change to the high-resistance state, the control device (4) controls the current limiting active element (3) so that a product of the current and the first resistance value is not smaller than the first voltage and controls the voltage limiting active element (2) so that an inter-electrode voltage is smaller than the second voltage; and upon change to the low-resistance state, the control device (4) controls the current limiting active element (3) so that an absolute value of a product of the current and the second resistance value is not smaller than the second voltage and an absolute value of a product of the current and the first resistance value is smaller than the first voltage.</p>
申请公布号 WO2008129774(A1) 申请公布日期 2008.10.30
申请号 WO2008JP00542 申请日期 2008.03.12
申请人 PANASONIC CORPORATION;KATOH, YOSHIKAZU;SHIMAKAWA, KAZUHIKO 发明人 KATOH, YOSHIKAZU;SHIMAKAWA, KAZUHIKO
分类号 G11C13/00 主分类号 G11C13/00
代理机构 代理人
主权项
地址