发明名称 Power semiconductor module for inverter circuit system
摘要 <p>A double-face-cooled semiconductor module (500) with an upper arm and a lower arm of an inverter circuit (44) includes first and second heat dissipation members (522, 562), each having a heat dissipation surface on one side and a conducting member (534) formed on another side through an insulation member (524). On the conducting member (534) on the first dissipation plate is provided with a fixing portion (536) that fixes a collector surface of the semiconductor chip (538, 547) and a gate conductor connected to a gate terminal (553) of the semiconductor module. The gate electrode terminal and the gate conductor (555) are wire bonded. The conducting member on the second heat dissipation member is connected to an emitter surface of the semiconductor chip connected to the first heat dissipation member. The productivity and reliability are improved by most of formation operations for the upper and lower arms series circuit on one of the heat dissipation member.</p>
申请公布号 EP1986234(A2) 申请公布日期 2008.10.29
申请号 EP20080006762 申请日期 2008.04.02
申请人 HITACHI, LTD. 发明人 TOKUYAMA, TAKESHI;NAKATSU, KINYA;SAITO, RYUICHI
分类号 H01L25/07;H01L23/40;H01L25/11 主分类号 H01L25/07
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