| 摘要 |
A method of manufacturing a semiconductor device is provided to prevent penetration of ion impurity and damage of photoresist layer in an etching process by performing an ion injection process and an etching process after forming a protection layer by performing a silylation process on the photoresist layer. A method of manufacturing a semiconductor device comprises; forming a gate insulating pattern and a gate electrode pattern(104a) on a semiconductor device(100); forming a photoresist layer pattern to expose a part of the region between the gate pattern on the semiconductor substrate; forming a protection layer of which etch speed is lower than that of the semiconductor substrate, on the photoresist pattern; forming a first trench on the semiconductor substrate by an etching process using the protection layer and the photoresist layer as an etch mask.
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