| 摘要 |
A diluent gas that is more likely to be decomposed than an etching gas is used to generate a plasma. The etching gas is thereafter introduced into a plasma processing reaction chamber (101) and the flow rate is adjusted so that the flow rate of the etching gas is increased while simultaneously the flow rate of the diluent gas is decreased by an amount substantially equal to the increase of the flow rate of the etching gas. Thus, a variation of the pressure in the plasma processing reaction chamber (101) is reduced. Further, the gas flow rate is set to a predetermined value to satisfy desired conditions while keeping the generated plasma.
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