| 摘要 |
A method for forming metal line of semiconductor memory device is prevent an over etch of a conduction layer in a CMP process and a wet damage of an insulating layer generated in a cleaning process after forming a space at a sidewall of a trench. A method for forming metal line of semiconductor memory device comprises; depositing sequentially a first insulating layer(101), a first etch stop layer(102), a second insulating layer(103) and a second etch stop layer on a semiconductor substrate(100); patterning sequentially the second etch stop layer and the second insulating layer and forming a trench to expose the first etch stop layer; forming a metal line on the entire structure including the trench; performing a CMP process to expose the second etch stop layer, and removing the second etch stop layer to form the metal line pattern.
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