发明名称 Method for creating a layout, use of a transistor layout, and semiconductor circuit
摘要 <p>The circuit has a matching structure with multiple transistors (M), where metallization levels with geometrically formed traces are formed directly above the transistors. Vias are provided in via levels that are formed between two of the metallization levels. Geometry of the traces above each transistor is formed substantially the same, within one and the same metallization level. The transistors of the matching structure are arranged adjacent to one another. The geometry of the traces within the metallization level has multiple strips parallel to one another. Independent claims are also included for the following: (1) a method for generating a layout of a semiconductor circuit having a matching structure (2) Use of a transistor layout of a matching structure in a layout generating method.</p>
申请公布号 EP1986237(A2) 申请公布日期 2008.10.29
申请号 EP20080007824 申请日期 2008.04.23
申请人 ATMEL GERMANY GMBH 发明人 KRAUSS, MARTIN
分类号 H01L27/02;G06F17/50;H01L23/522;H01L23/66;H01L27/118 主分类号 H01L27/02
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