摘要 |
<p>A parallel spiral stacked inductor [100] and manufacturing method therefore is provided. A substrate [112] has a plurality of turns [124,124',126,126'] in a plurality of levels, the plurality of turns [124,124',126,126'] having a center proximate and a center distal ends. First vias [132v] connecting the center proximate ends of the plurality of turns [124,124',126,126'] and second vias [133] connecting the center distal ends of the plurality of turns [124,124',126,126']. A first connecting portion [130] connects to the center proximate ends of the plurality of turns [124,124',126,126'] and a second connecting portion [134] connecting to the center distal end of the plurality of turns [124,124',126,126']. A dielectric material [114,116,118,120] contains the inductor [122].</p> |
申请人 |
CHARTERED SEMICONDUCTOR MANUFACTURING LTD. |
发明人 |
SIA, CHOON-BENG;SWE, TOE NAING;SEE, ALEX;YEO, KIAT SENG;NG, CHEN YEOW |