| 摘要 |
<p>A method of forming a photoresist pattern in a semiconductor device is to improve the distribution of a program threshold voltage of device. A method of forming a photoresist pattern in a semiconductor device comprises; forming an etch target layer and an anti-reflective coating on a semiconductor substrate; applying a photoresist layer on the anti reflective coating; performing an exposure process using a mask to expose the photoresist layer; performing a first bake process to harden the photoresist layer; performing a development process to form a photoresist pattern; performing a second bake process to improve LER of the photoresist pattern.</p> |
