| 摘要 |
<p>A thin film transistor and a method for preparing the same are provided to etch selectively a channel material of a semiconductor layer and a source and drain electrode. A thin film transistor and a method for preparing the same comprises a step for forming a gate electrode on a substrate; a step for forming an insulating layer on the gate electrode; a step for forming a semiconductor layer on the insulating layer; a step for forming a source and drain electrode by using a zinc oxide based material including at least one of Si, Mo, and W, connected to the semiconductor layer.</p> |
