Improvement in high-speed image sensors

摘要

Through silicon vias are used to connect CMOS image sensors arranged on a silicon die surface with memory, processing or shift register circuits arranged either on the back surface of the silicon die or on a further integrated circuit die. Multichip modules having three dies are also described. The top surface of the image sensor only contains photodiode sensors which increases the photosensitive area of the sensor. This configuration allows high speed readout from active pixel sensors.