发明名称 Thermal inkjet printhead processing with silicon etching
摘要 <p>A method of etching the trench portions (32) of a thermal inkjet printhead (10) using a robust mask that precisely defines the area of the substrate surface (34) to be etched and that protects the adjacent drop generator components from damaging exposure to the silicon etchant. The process in accordance with the present invention uses as a mask some of the material (40, 54) that is also used in patterned layers for producing the drop generator components on the substrate (30). The placement of the mask components on the substrate occurs simultaneously with the production of the drop generator components, thereby minimizing the time and expense of creating the silicon-etchant mask. <IMAGE> <IMAGE> <IMAGE> <IMAGE> <IMAGE> <IMAGE> <IMAGE></p>
申请公布号 EP1284189(B1) 申请公布日期 2008.10.29
申请号 EP20020255596 申请日期 2002.08.09
申请人 HEWLETT-PACKARD COMPANY 发明人 DODD, SIMON
分类号 B41J2/16;H01L21/306 主分类号 B41J2/16
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