| 摘要 |
<p>A flash memory device and a method for manufacturing the same are provided to form a wing spacer by remaining a HARP layer at the lateral side of tunnel insulating layer in order to reduce the interference effect. A manufacturing method of flash memory device includes the step of forming a trench(120) by etching a part of semiconductor substrate, a charge storage layer, and a tunnel insulating layer, after forming the tunnel insulating layer(102) and the charge storage layer(104) on the semiconductor substrate(100); the step of filling the trench with an insulating layer; the step of forming a wing spacer(A) by remaining the insulating layer at the lateral side of the tunnel insulating layer, and adjusting the EFH by etching the upper part of the insulating layer. The insulating layer is made of SiO2 layer or HARP layer with excellent step coverage.</p> |
