SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

A semiconductor device and a method for manufacturing the same are provided to implement the low power consumption and reduce the junction capacitance by simplifying a process. A semiconductor device includes a base substrate(101); a semiconductor film(100) formed on the base substrate; a gate insulating layer(108) formed on the semiconductor film; and an electrode(109) formed on the gate insulating layer. The semiconductor film includes a channel forming region which is overlapped with the electrode by inserting the gate insulating layer. An opening(117) is formed between a concave part of the semiconductor film and the base substrate. The opening is connected with the opening. The insulating layer is formed between the base substrate and the semiconductor film.