PHASE CHANGE MEMORY DEVICES AND METHOD FOR FORMING THEREOF

摘要

A phase change memory device and a method for forming thereof are provided to reduce the contact area between a phase change material layer and a conductor connected to the phase change material layer in order to operate the phase change memory device at a low temperature. A phase change memory device comprises an insulating layer which is positioned on a substrate and has an opening; a phase change material layer(140) filling the opening. The phase change material layer includes a first part adjacent to the lateral and the bottom part of the opening; a second part which fills the opening and has different characteristic from the first part. The phase change material layer is formed through at least two deposition processes which are performed under the different situation.